FDMC8030 vs FDMC86259P

This in-depth comparison of the FDMC8030 and FDMC86259P provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
FDMC8030

+BOM

3544 PCS | onsemi
FDMC86259P

+BOM

7633 PCS | onsemi
Package
Description MOSFET 2N-CH 40V 12A 8PWR33 MOSFET P-CH 150V 3.2A/13A PWR33
Series PowerTrench® PowerTrench®
Part Status Obsolete Active
Base Product Number FDMC80 FDMC86259
FET Type - P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V 150 V
Current - Continuous Drain (Id) @ 25°C 12A 3.2A (Ta), 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 6V, 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 12A, 10V 107mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V 32 nC @ 10 V
Vgs (Max) - ±25V
Input Capacitance (Ciss) (Max) @ Vds 1975pF @ 20V 2045 pF @ 75 V
Power Dissipation (Max) - 2.3W (Ta), 62W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Packaging Cut Tape (CT), Tape & Reel (TR) Cut Tape (CT), Tape & Reel (TR)
Configuration 2 N-Channel (Dual) -
FET Feature Logic Level Gate -
Power - Max 800mW -
Comparison Model : FDMC8030 FDMC86259P

+BOM RFQ