FDMC8030 vs FDMC86139P

This in-depth comparison of the FDMC8030 and FDMC86139P provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

FDMC8030

onsemi

Lifecycle: Active
Stock: 3544 PCS
Series: Transistors - FETs, MOSFETs - FET, MOSFET Arrays

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Part B

FDMC86139P

onsemi

Lifecycle: Active
Stock: 5029 PCS
Package: WDFN-8
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	FDMC8030	FDMC86139P
Series	PowerTrench®	PowerTrench®
Part Status	Obsolete	Active
FET Type	-	P-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V	100 V
Current - Continuous Drain(Id) @ 25°C	-	4.4A (Ta), 15A (Tc)
Drive Voltage(Max Rds On Min Rds On)	-	6V, 10V
Rds On(Max) @ Id Vgs	-	67mOhm @ 4.4A, 10V
Vgs(th)(Max) @ Id	-	4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	-	22 nC @ 10 V
Vgs(Max)	-	±25V
Input Capacitance(Ciss)(Max) @ Vds	-	1335 pF @ 50 V
Power Dissipation (Max)	-	2.3W (Ta), 40W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Base Product Number	FDMC80	-
Configuration	2 N-Channel (Dual)	-
FET Feature	Logic Level Gate	-
Current - Continuous Drain (Id) @ 25°C	12A	-
Rds On (Max) @ Id, Vgs	10mOhm @ 12A, 10V	-
Vgs(th) (Max) @ Id	2.8V @ 250µA	-
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V	-
Input Capacitance (Ciss) (Max) @ Vds	1975pF @ 20V	-
Power - Max	800mW	-
Packaging	Cut Tape (CT), Tape & Reel (TR)	-

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