FDMC86259P vs FDMC8032L

This in-depth comparison of the FDMC86259P and FDMC8032L provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

FDMC86259P

onsemi

Lifecycle
Active
Stock
7633 PCS
Series
Transistors - FETs, MOSFETs - Single FETs, MOSFETs
+BOM RFQ
Part B

FDMC8032L

onsemi

Lifecycle
Active
Stock
6487 PCS
Package
WDFN-8
Series
Transistors - FETs, MOSFETs - Arrays
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification FDMC86259P FDMC8032L
Series PowerTrench® PowerTrench®
Part Status Active Active
Base Product Number FDMC86259 -
FET Type P-Channel 2 N-Channel (Dual)
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 150 V 40V
Current - Continuous Drain (Id) @ 25°C 3.2A (Ta), 13A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V -
Rds On (Max) @ Id, Vgs 107mOhm @ 3A, 10V -
Vgs(th) (Max) @ Id 4V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V -
Vgs (Max) ±25V -
Input Capacitance (Ciss) (Max) @ Vds 2045 pF @ 75 V -
Power Dissipation (Max) 2.3W (Ta), 62W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Packaging Cut Tape (CT), Tape & Reel (TR) -
FET Feature - Logic Level Gate
Current - Continuous Drain(Id) @ 25°C - 7A
Rds On(Max) @ Id Vgs - 20mOhm @ 7A, 10V
Vgs(th)(Max) @ Id - 3V @ 250µA
Gate Charge(Qg)(Max) @ Vgs - 11nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds - 720pF @ 20V
Power - Max - 1.9W
Compare RFQ