FDMC8032L vs FDMC86259P

This in-depth comparison of the FDMC86259P and FDMC8032L provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
FDMC86259P

+BOM

7633 PCS | onsemi
FDMC8032L

+BOM

6487 PCS | onsemi
Package PowerWDFN-8
Description MOSFET P-CH 150V 3.2A/13A PWR33 MOSFET 2N-CH 40V 7A 8-MLP
Series PowerTrench® PowerTrench®
Part Status Active -
Base Product Number FDMC86259 -
FET Type P-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 150 V -
Current - Continuous Drain (Id) @ 25°C 3.2A (Ta), 13A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V -
Rds On (Max) @ Id, Vgs 107mOhm @ 3A, 10V -
Vgs(th) (Max) @ Id 4V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V -
Vgs (Max) ±25V -
Input Capacitance (Ciss) (Max) @ Vds 2045 pF @ 75 V -
Power Dissipation (Max) 2.3W (Ta), 62W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Packaging Cut Tape (CT), Tape & Reel (TR) -
ProductStatus - Active
FETType - 2 N-Channel (Dual)
FETFeature - Logic Level Gate
DraintoSourceVoltage(Vdss) - 40V
Current-ContinuousDrain(Id)@25°C - 7A
RdsOn(Max)@IdVgs - 20mOhm @ 7A, 10V
Vgs(th)(Max)@Id - 3V @ 250µA
GateCharge(Qg)(Max)@Vgs - 11nC @ 10V
InputCapacitance(Ciss)(Max)@Vds - 720pF @ 20V
Power-Max - 1.9W
OperatingTemperature - -55°C ~ 150°C (TJ)
MountingType - Surface Mount
Comparison Model : FDMC86259P FDMC8032L

+BOM RFQ