IRF9530PBF vs IRF9540NSTRLPBF Comparison

This in-depth comparison of the IRF9540NSTRLPBF and IRF9530PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
IRF9540NSTRLPBF

+BOM

3445 PCS | Infineon Technologies
IRF9530PBF

+BOM

5699 PCS | Vishay Siliconix
Package TO-263-3 TO-220-3
Description MOSFET P-CH 100V 23A D2PAK MOSFET P-CH 100V 12A TO220AB
Series HEXFET® -
Part Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain(Id) @ 25°C 23A (Tc) 12A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V 10V
Rds On(Max) @ Id Vgs 117mOhm @ 14A, 10V 300mOhm @ 7.2A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 110 nC @ 10 V 38 nC @ 10 V
Vgs(Max) ±20V ±20V
Input Capacitance(Ciss)(Max) @ Vds 1450 pF @ 25 V 860 pF @ 25 V
Power Dissipation (Max) 3.1W (Ta), 110W (Tc) 88W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Through Hole
Comparison Model : IRF9540NSTRLPBF IRF9530PBF

+BOM RFQ