IRFB38N20DPBF vs IRFB3307PBF

This in-depth comparison of the IRFB38N20DPBF and IRFB3307PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRFB38N20DPBF

Infineon Technologies

Lifecycle: Active
Stock: 6086 PCS
Package: TO-220
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

Part B

IRFB3307PBF

Infineon Technologies

Lifecycle: Active
Stock: 7797 PCS
Package: TO-220-3
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

RFQ Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRFB38N20DPBF	IRFB3307PBF
Series	HEXFET®	HEXFET®
Part Status	Active	Active
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V	75 V
Current - Continuous Drain(Id) @ 25°C	43A (Tc)	130A (Tc)
Drive Voltage(Max Rds On Min Rds On)	10V	10V
Rds On(Max) @ Id Vgs	54mOhm @ 26A, 10V	6.3mOhm @ 75A, 10V
Vgs(th)(Max) @ Id	5V @ 250µA	4V @ 150µA
Gate Charge(Qg)(Max) @ Vgs	91 nC @ 10 V	180 nC @ 10 V
Vgs(Max)	±20V	±20V
Input Capacitance(Ciss)(Max) @ Vds	2900 pF @ 25 V	5150 pF @ 50 V
Power Dissipation (Max)	3.8W (Ta), 300W (Tc)	200W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole	Through Hole

Compare RFQ