IRFB3206PBF vs IRFB38N20DPBF Comparison
This in-depth comparison of the IRFB38N20DPBF and IRFB3206PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
Package
TO-220
TO-220-3
Description
IRFB38N20 - 12V-300V N-CHANNEL P
MOSFET N-CH 60V 120A TO220AB
Series
HEXFET®
HEXFET®
Part Status
Active
Active
FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
60 V
Current - Continuous Drain(Id) @ 25°C
43A (Tc)
120A (Tc)
Drive Voltage(Max Rds On Min Rds On)
10V
10V
Rds On(Max) @ Id Vgs
54mOhm @ 26A, 10V
3mOhm @ 75A, 10V
Vgs(th)(Max) @ Id
5V @ 250µA
4V @ 150µA
Gate Charge(Qg)(Max) @ Vgs
91 nC @ 10 V
170 nC @ 10 V
Vgs(Max)
±20V
±20V
Input Capacitance(Ciss)(Max) @ Vds
2900 pF @ 25 V
6540 pF @ 50 V
Power Dissipation (Max)
3.8W (Ta), 300W (Tc)
300W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Through Hole
