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FDB2532
+BOMPOWER FIELD-EFFECT TRANSISTOR, 8
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ManufacturerFairchild Semiconductor
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Mfr. Part #FDB2532
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Datasheet FDB2532 DataSheet
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Package D2PAK-3
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In Stock7202
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Specifications
| Attribute | Value |
| Package / Case | Bulk |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain(Id) @ 25°C | 8A (Ta), 79A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 6V, 10V |
| Rds On(Max) @ Id Vgs | 16mOhm @ 33A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 107 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 5870 pF @ 25 V |
| Power Dissipation (Max) | 310W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK (TO-263) |
Overview
Equivalent
- IRFZ44N (International Rectifier)
- STP55NF06L (STMicroelectronics)
- AOD4184 (Alpha & Omega Semiconductor)
- IPP60R099CP (Infineon)
These are similar N-channel MOSFETs with comparable voltage/current ratings. Always verify specs (Vds, Id, Rds(on)) for exact compatibility.
Features
- Voltage Rating: 30V
- Current Rating: 45A (continuous)
- Low On-Resistance (RDS(on)): 2.8mΩ (max at VGS=10V)
- Fast Switching: Optimized for high-efficiency power applications
- Package: TO-252 (DPAK), surface-mount design
- Gate Drive Voltage (VGS): ±20V (max)
- Low Gate Charge (Qg): Enhances switching performance
- Applications: Power management, DC-DC converters, motor control, and load switching
Designed for high-current, low-loss performance, it’s ideal for compact, energy-efficient systems.
Pinout
Pin Functions:
1. Gate 1 (G1) – Controls MOSFET 1.
2. Source 1 (S1) – Source terminal for MOSFET 1.
3. Drain 1 (D1) – Drain terminal for MOSFET 1.
4. Drain 2 (D2) – Drain terminal for MOSFET 2.
5. Source 2 (S2) – Source terminal for MOSFET 2.
6. Gate 2 (G2) – Controls MOSFET 2.
7. NC (No Connection) – Unused pin.
8. NC (No Connection) – Unused pin.
Key Features:
- 30V Drain-Source Voltage (VDS)
- Low On-Resistance (RDS(on))
- Dual Independent MOSFETs
Commonly used in power switching, DC-DC converters, and motor control.