FQD4P40TM

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FQD4P40TM

+BOM

POWER FIELD-EFFECT TRANSISTOR, 2

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Specifications

Attribute Value
Package Bulk
Series QFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 400 V
Current-ContinuousDrain(Id)@25°C 2.7A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 3.1Ohm @ 1.35A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 23 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 680 pF @ 25 V
PowerDissipation(Max) 2.5W (Ta), 50W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage TO-252, (D-Pak)

Overview

Description

The FQD4P40TM is a P-channel MOSFET designed for power management applications. Key features include:
- Voltage Rating: -40V
- Current Capacity: -4A (continuous)
- Low On-Resistance (RDS(on)): ~85mΩ (at VGS = -10V)
- Compact Package: TO-252 (DPAK) for efficient PCB mounting
It is commonly used in:
- Load switching (battery protection, power distribution)
- DC-DC converters
- Motor control
Advantages include low gate charge, fast switching, and thermal efficiency, making it suitable for space-constrained, high-performance circuits.
For detailed specs, refer to the datasheet from the manufacturer (e.g., ON Semiconductor or Fairchild).

Equivalent

The FQD4P40TM is a 40V P-channel MOSFET. Equivalent alternatives include:
- IRF9Z34N (Infineon)
- FQP27P06 (Fairchild/ON Semi)
- STP55P06FP (STMicroelectronics)
- SI7137DP-T1-GE3 (Vishay)
Check datasheets for exact specs like current rating, RDS(on), and package compatibility before substitution.

Features

The FQD4P40TM is a P-channel MOSFET with the following key features:
- Voltage Rating: -40V (Drain-to-Source, VDSS)
- Current Rating: -4.0A (Continuous Drain Current, ID)
- Low On-Resistance: 120mΩ (max) at VGS = -10V
- Fast Switching: Low gate charge (Qg) for efficient performance
- Logic-Level Gate Drive: Compatible with 5V/10V drive signals
- Package: TO-252 (DPAK), surface-mount design
- Applications: Power management, load switching, DC-DC converters
Compact and efficient, it’s suited for space-constrained designs requiring reliable power handling.

Pinout

The FQD4P40TM is a 40V P-channel MOSFET in a PowerDI 123 package.
- Pin Count: 3 pins (Gate, Drain, Source).
- Function: Designed for power switching in applications like load switches, DC-DC converters, and battery management.
- Key Features:
- -40V drain-source voltage (VDS).
- -4.0A continuous drain current (ID).
- Low RDS(on) (e.g., ~50mΩ at VGS = -10V).
- Logic-level gate drive (VGS(th) ~ -1V).
Compact and efficient for space-constrained designs.

Manufacturer

The FQD4P40TM is a Power MOSFET manufactured by Fairchild Semiconductor, now part of ON Semiconductor after its acquisition in 2016.
Fairchild Semiconductor was a pioneering American semiconductor company known for power management, analog, and discrete components. ON Semiconductor is a global leader in energy-efficient technologies, specializing in power and signal management solutions for automotive, industrial, and consumer markets.
The FQD4P40TM is a P-channel MOSFET designed for high-efficiency power switching applications.

Application

The FQD4P40TM is a P-channel MOSFET commonly used in:
1. Power Management – Voltage regulation, load switching.
2. Battery Protection – Reverse polarity and overcurrent prevention.
3. Motor Control – Driving small DC motors.
4. DC-DC Converters – Efficient power conversion.
5. Automotive Electronics – Switching and protection circuits.
Its low on-resistance and high current capability make it suitable for compact, energy-efficient designs.

Package

The FQD4P40TM is a PowerTrench MOSFET in a TO-252 (DPAK) surface-mount package. It features low on-resistance and high-speed switching, suitable for power management applications. The package is compact, with a single-gull-wing lead design, making it ideal for high-efficiency power conversion.

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