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FQP85N06
+BOMPOWER FIELD-EFFECT TRANSISTOR, 8
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ManufacturerFairchild Semiconductor
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Mfr. Part #FQP85N06
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Datasheet FQP85N06 DataSheet
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Package TO-220-3
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In Stock3565
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Specifications
| Attribute | Value |
| Package / Case | Bulk |
| Series | QFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 85A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 10mOhm @ 42.5A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 112 nC @ 10 V |
| Vgs(Max) | ±25V |
| Input Capacitance(Ciss)(Max) @ Vds | 4120 pF @ 25 V |
| Power Dissipation (Max) | 160W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
Overview
Description
The FQP85N06 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic circuits for switching and amplification purposes. Manufactured by Fairchild Semiconductor, it is designed to handle high current and voltage levels, making it suitable for various power applications.
Key specifications include a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of 80A, allowing it to manage significant power loads. Its low on-resistance (R_DS(on)) of around 0.016 ohms ensures efficient operation with minimal power loss. The FQP85N06 is typically housed in a TO-220 package, which provides effective heat dissipation through its metal tab, making it suitable for use with heatsinks in high-power applications.
This MOSFET is popular in applications such as motor drivers, power supplies, and audio amplifiers, where efficient power management is crucial. Its robustness and reliability make it a preferred choice among engineers designing circuits requiring high efficiency and high-current handling capabilities.
Key specifications include a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of 80A, allowing it to manage significant power loads. Its low on-resistance (R_DS(on)) of around 0.016 ohms ensures efficient operation with minimal power loss. The FQP85N06 is typically housed in a TO-220 package, which provides effective heat dissipation through its metal tab, making it suitable for use with heatsinks in high-power applications.
This MOSFET is popular in applications such as motor drivers, power supplies, and audio amplifiers, where efficient power management is crucial. Its robustness and reliability make it a preferred choice among engineers designing circuits requiring high efficiency and high-current handling capabilities.
Equivalent
The FQP85N06 is an N-channel MOSFET. Equivalent products include the IRFZ44N, IRFZ48N, and STP75NF75 When selecting an equivalent, ensure it meets or exceeds the original specifications in terms of voltage, current, and Rds(on) to ensure compatibility. Always check the datasheet for specific parameters and thermal characteristics.
Features
The FQP85N06 is an N-channel MOSFET designed for high efficiency and fast switching applications. Key features include:
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of 80A, making it suitable for high-power applications.
2. R_DS(on): The on-resistance is typically low, around 8 mΩ, which minimizes power loss and heat generation during operation.
3. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is around 2-4V, allowing it to be driven with standard logic level signals.
4. Fast Switching Speed: The MOSFET supports rapid switching, which is ideal for applications requiring high-frequency operation.
5. Package Type: It is commonly available in a TO-220 package, which provides good thermal performance and is easy to mount on heatsinks.
6. Applications: It is widely used in power management, motor control, DC-DC converters, and load switching.
These features make the FQP85N06 a versatile choice for various electronic applications requiring efficient power handling.
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of 80A, making it suitable for high-power applications.
2. R_DS(on): The on-resistance is typically low, around 8 mΩ, which minimizes power loss and heat generation during operation.
3. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is around 2-4V, allowing it to be driven with standard logic level signals.
4. Fast Switching Speed: The MOSFET supports rapid switching, which is ideal for applications requiring high-frequency operation.
5. Package Type: It is commonly available in a TO-220 package, which provides good thermal performance and is easy to mount on heatsinks.
6. Applications: It is widely used in power management, motor control, DC-DC converters, and load switching.
These features make the FQP85N06 a versatile choice for various electronic applications requiring efficient power handling.
Pinout
The FQP85N06 is an N-channel MOSFET transistor designed for high-speed switching applications. It typically comes in a TO-220 package and has three pins:
1. Gate (G): This pin is used to control the MOSFET's switching state. Applying a voltage to the gate pin allows current to flow between the drain and source.
2. Drain (D): This is the pin through which the main current flows from the drain to the source when the MOSFET is in the "on" state.
3. Source (S): This pin acts as the path for the current leaving the MOSFET. It is connected to the load in most applications.
The FQP85N06 is typically used in applications requiring fast switching and can handle a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of 85A. It is often used in power management, motor control, and switching regulators.
1. Gate (G): This pin is used to control the MOSFET's switching state. Applying a voltage to the gate pin allows current to flow between the drain and source.
2. Drain (D): This is the pin through which the main current flows from the drain to the source when the MOSFET is in the "on" state.
3. Source (S): This pin acts as the path for the current leaving the MOSFET. It is connected to the load in most applications.
The FQP85N06 is typically used in applications requiring fast switching and can handle a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of 85A. It is often used in power management, motor control, and switching regulators.
Manufacturer
The FQP85N06 is manufactured by ON Semiconductor, a company known for producing a wide range of semiconductor components. ON Semiconductor focuses on power and signal management, logic, discrete, and custom devices for a variety of industries, including automotive, communications, computing, consumer electronics, industrial, medical, and military/aerospace.
Application
The FQP85N06 is an N-channel MOSFET commonly used in various electronic applications due to its high efficiency and reliability. Its primary application areas include:
1. Power Supply Circuits: Used in DC-DC converters and power management systems for efficient switching.
2. Motor Control: Suitable for driving motors in automotive and industrial applications.
3. Load Switching: Ideal for switching heavy loads due to its high current handling capacity.
4. Inverter Circuits: Utilized in inverters for renewable energy systems, such as solar inverters.
5. LED Drivers: Employed in LED lighting systems for dimming control and efficient power usage.
6. Audio Amplifiers: Used in audio amplifier circuits for better sound quality and efficiency.
These applications benefit from the MOSFET’s low on-resistance and fast switching capabilities.
1. Power Supply Circuits: Used in DC-DC converters and power management systems for efficient switching.
2. Motor Control: Suitable for driving motors in automotive and industrial applications.
3. Load Switching: Ideal for switching heavy loads due to its high current handling capacity.
4. Inverter Circuits: Utilized in inverters for renewable energy systems, such as solar inverters.
5. LED Drivers: Employed in LED lighting systems for dimming control and efficient power usage.
6. Audio Amplifiers: Used in audio amplifier circuits for better sound quality and efficiency.
These applications benefit from the MOSFET’s low on-resistance and fast switching capabilities.
Package
The FQP85N06 is packaged in a TO-220 case, commonly used for power transistors and MOSFETs. This package type offers good thermal performance and is designed for through-hole mounting, making it suitable for applications requiring efficient heat dissipation and mechanical robustness.
