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FDN338P
+BOMSMALL SIGNAL FIELD-EFFECT TRANSI
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ManufacturerFairchild Semiconductor
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Mfr. Part #FDN338P
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Datasheet FDN338P DataSheet
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Package SSOT-3
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In Stock7075
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Specifications
| Attribute | Value |
| Package | Bulk |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 1.6A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 2.5V, 4.5V |
| RdsOn(Max)@IdVgs | 115mOhm @ 1.6A, 4.5V |
| Vgs(th)(Max)@Id | 1.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 6.2 nC @ 4.5 V |
| Vgs(Max) | ±8V |
| InputCapacitance(Ciss)(Max)@Vds | 451 pF @ 10 V |
| PowerDissipation(Max) | 500mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 |
Overview
Description
FDN338P is a course that typically focuses on advanced foundational topics within a particular discipline, although specifics may vary depending on the institution. The course is designed for students who have already completed introductory and intermediate level coursework, and it aims to deepen their understanding by exploring complex concepts and theories. Key components of the course often include critical analysis, research methodologies, and the application of theoretical knowledge to practical scenarios. Students might engage in collaborative projects, case studies, and presentations to demonstrate their learning. Assessment could comprise written assignments, exams, and potentially a final project or paper. The course may also require active participation in discussions to encourage diverse perspectives and enhance learning outcomes. Overall, FDN338P seeks to equip students with a robust framework for critical thinking and problem-solving within their field of study, preparing them for further academic pursuits or professional applications. For specific details, it is recommended to refer to the course syllabus or contact the course instructor.
Equivalent
The FDN338P is a P-channel MOSFET. Equivalent products include:
1. 2N7002P (though this is an N-channel MOSFET, some characteristics might overlap).
2. IRF9Z24N
3. AO3407
4. PMV16XNR
5. Si2301
When selecting an equivalent, ensure the specifications such as voltage, current, and package are compatible with your application. Always check the datasheets for precise matching.
1. 2N7002P (though this is an N-channel MOSFET, some characteristics might overlap).
2. IRF9Z24N
3. AO3407
4. PMV16XNR
5. Si2301
When selecting an equivalent, ensure the specifications such as voltage, current, and package are compatible with your application. Always check the datasheets for precise matching.
Features
The FDN338P is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) notable for its specific features that make it suitable for various applications. Here are some key features:
1. Type: N-channel MOSFET, which means it has an N-type channel and is used for switching and amplifying electronic signals.
2. Voltage and Current Ratings: It typically supports a maximum drain-source voltage (V_DS) of up to 30V and a continuous drain current (I_D) of around 5.8A, allowing it to handle moderate power loads.
3. R_DS(on): This MOSFET has a low on-resistance (R_DS(on)) which minimizes power loss and heat generation, enhancing efficiency.
4. Package: Available in a standard SOT-23 package, making it compact and suitable for space-constrained applications.
5. Thermal Performance: It is designed to provide efficient thermal performance, suitable for portable and battery-powered devices.
6. Applications: Commonly used in applications such as DC-DC converters, load switches, and low-voltage applications due to its fast switching speed and efficiency.
These features make the FDN338P a versatile component in electronic design.
1. Type: N-channel MOSFET, which means it has an N-type channel and is used for switching and amplifying electronic signals.
2. Voltage and Current Ratings: It typically supports a maximum drain-source voltage (V_DS) of up to 30V and a continuous drain current (I_D) of around 5.8A, allowing it to handle moderate power loads.
3. R_DS(on): This MOSFET has a low on-resistance (R_DS(on)) which minimizes power loss and heat generation, enhancing efficiency.
4. Package: Available in a standard SOT-23 package, making it compact and suitable for space-constrained applications.
5. Thermal Performance: It is designed to provide efficient thermal performance, suitable for portable and battery-powered devices.
6. Applications: Commonly used in applications such as DC-DC converters, load switches, and low-voltage applications due to its fast switching speed and efficiency.
These features make the FDN338P a versatile component in electronic design.
Pinout
The FDN338P is a P-channel MOSFET transistor typically used in electronic circuits for switching and amplification purposes. It comes in a surface-mount SOT-23 package, which is a small outline transistor package commonly used in various applications.
The FDN338P has three pins, with the following functions:
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, you can control the flow of current between the source and drain.
2. Source (S): This is the pin through which current enters the MOSFET. In a P-channel MOSFET, the source is usually connected to the positive supply voltage.
3. Drain (D): This pin allows current to flow out of the MOSFET when it is turned on.
These three pins allow the FDN338P to operate as an electronic switch or amplifier in various circuits. Its P-channel characteristic means it is turned on when the gate voltage is more negative relative to the source.
The FDN338P has three pins, with the following functions:
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, you can control the flow of current between the source and drain.
2. Source (S): This is the pin through which current enters the MOSFET. In a P-channel MOSFET, the source is usually connected to the positive supply voltage.
3. Drain (D): This pin allows current to flow out of the MOSFET when it is turned on.
These three pins allow the FDN338P to operate as an electronic switch or amplifier in various circuits. Its P-channel characteristic means it is turned on when the gate voltage is more negative relative to the source.
Manufacturer
The FDN338P is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. ON Semiconductor, now known as onsemi, is a leading supplier in the semiconductor industry. The company designs and produces a wide range of semiconductor components primarily for power and signal management to support electronics across various industries, including automotive, industrial, communications, computing, consumer, and medical. With a focus on energy-efficient innovation, onsemi provides solutions to help reduce global energy consumption.
Application
The FDN338P is a P-channel MOSFET often used in various applications due to its compact size and efficient performance. It is primarily utilized in load switching, where it helps control power to a device or circuit. Additionally, it's used in DC-DC converters to enhance power efficiency. Its low on-resistance and fast switching capabilities make it suitable for battery-powered devices, such as smartphones and tablets, ensuring energy conservation. The FDN338P is also found in power management applications, including power distribution in portable electronics. Its reliability and performance make it a popular choice in consumer electronics and automotive applications for efficient power handling.
Package
The FDN338P is a P-channel MOSFET that comes in a surface-mount SOT-23 package. This type of package is commonly used for small electronic components with three pins, suitable for applications where space is limited.
