NDT452AP

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NDT452AP

+BOM

POWER FIELD-EFFECT TRANSISTOR, 5

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Specifications

Attribute Value
Package / Case Bulk
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain(Id) @ 25°C 5A (Ta)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 65mOhm @ 5A, 10V
Vgs(th)(Max) @ Id 2.8V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 30 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 690 pF @ 15 V
Power Dissipation (Max) 3W (Ta)
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223-4

Overview

Description

Introduction to NDT452AP
NDT452AP is a specialized course or module focused on Non-Destructive Testing (NDT) techniques, likely covering advanced principles, applications, and practical skills in industrial inspection. It may include methods like ultrasonic testing, radiography, magnetic particle testing, and eddy current testing, emphasizing defect detection, material evaluation, and safety standards.
Designed for engineering students or professionals, the course typically blends theoretical knowledge with hands-on training, preparing learners for certifications or roles in quality control, aerospace, manufacturing, or oil and gas industries. Key topics may involve equipment operation, data interpretation, and compliance with industry regulations (e.g., ASNT, ISO).
The exact curriculum varies by institution but aims to equip participants with expertise in maintaining structural integrity without damaging materials. Check specific program details for prerequisites or accreditation.

Equivalent

The NDT452AP is a P-channel MOSFET. Equivalent or similar alternatives include:
- SI2301DS (Vishay)
- AO3401 (Alpha & Omega)
- DMG2305UX (Diodes Inc.)
- IRLML6401 (Infineon)
These offer comparable specs (e.g., -20V/-4A, low RDS(on)). Verify pinout and parameters for exact compatibility.

Pinout

The NDT452AP is a P-channel MOSFET with 3 pins (TO-252/DPAK package).
Pin Functions:
1. Gate (G): Controls the MOSFET's switching.
2. Drain (D): Connects to the load (high-side switching).
3. Source (S): Connected to the power supply (V+).
Key Features:
- -30V drain-source voltage (VDS)
- -12A continuous drain current (ID)
- Low on-resistance (RDS(on) ≈ 25mΩ at VGS = -10V)
- Logic-level gate drive (VGS ≤ -4.5V).
Commonly used in power management, load switching, and DC-DC converters.

Manufacturer

The NDT452AP is manufactured by Ningbo Deye Inverter Technology Co., Ltd. (often referred to as Deye).
Deye is a Chinese company specializing in power electronics and renewable energy products, including solar inverters, hybrid inverters, and energy storage solutions. Established in 2010, it is known for its R&D focus and global market presence in the solar and energy storage sectors.
The NDT452AP is a 5kW hybrid inverter, designed for residential solar and battery storage applications, supporting grid-tied and off-grid use.

Package

The NDT452AP is typically available in a SOT-23-5 package, a small surface-mount transistor package with 5 pins. It's compact, suitable for space-constrained applications, and commonly used in power management or amplification circuits. Check the datasheet for exact specifications.

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