IR2117STRPBF vs IR2113STR
This in-depth comparison of the IR2117STRPBF and IR2113STR provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
Package
SOIC 8N
SOIC W-16
Description
IC GATE DRVR HIGH-SIDE 8SOIC
IC GATE DRVR HALF-BRIDGE 16SOIC
ProductStatus
Active
Obsolete
DrivenConfiguration
High-Side
Half-Bridge
ChannelType
Single
Independent
NumberofDrivers
1
2
GateType
IGBT, N-Channel MOSFET
IGBT, N-Channel MOSFET
Voltage-Supply
10V ~ 20V
3.3V ~ 20V
LogicVoltage-VILVIH
6V, 9.5V
6V, 9.5V
Current-PeakOutput(SourceSink)
250mA, 500mA
2A, 2A
InputType
Non-Inverting
Non-Inverting
HighSideVoltage-Max(Bootstrap)
600 V
600 V
Rise/FallTime(Typ)
80ns, 40ns
25ns, 17ns
OperatingTemperature
-40°C ~ 150°C (TJ)
-40°C ~ 150°C (TJ)
MountingType
Surface Mount
Surface Mount
