IR2117STRPBF vs IR2118SPBF
This in-depth comparison of the IR2117STRPBF and IR2118SPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
Package
SOIC 8N
SOIC 8N
Description
IC GATE DRVR HIGH-SIDE 8SOIC
IC GATE DRVR HIGH-SIDE 8SOIC
ProductStatus
Active
Active
DrivenConfiguration
High-Side
High-Side
ChannelType
Single
Single
NumberofDrivers
1
1
GateType
IGBT, N-Channel MOSFET
IGBT, N-Channel MOSFET
Voltage-Supply
10V ~ 20V
10V ~ 20V
LogicVoltage-VILVIH
6V, 9.5V
6V, 9.5V
Current-PeakOutput(SourceSink)
250mA, 500mA
250mA, 500mA
InputType
Non-Inverting
Inverting
HighSideVoltage-Max(Bootstrap)
600 V
600 V
Rise/FallTime(Typ)
80ns, 40ns
80ns, 40ns
OperatingTemperature
-40°C ~ 150°C (TJ)
-40°C ~ 150°C (TJ)
MountingType
Surface Mount
Surface Mount
