IRF9388TRPBF vs IRF9310PBF

This in-depth comparison of the IRF9310PBF and IRF9388TRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
IRF9310PBF

+BOM

4563 PCS | Infineon Technologies
IRF9388TRPBF

+BOM

1405 PCS | Infineon Technologies
Package SO-8 SO-8
Description MOSFET P-CH 30V 20A 8SO MOSFET P-CH 30V 12A 8SO
Series HEXFET® HEXFET®
ProductStatus Discontinued at Digi-Key Active
FETType P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V 30 V
Current-ContinuousDrain(Id)@25°C 20A (Tc) 12A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V 10V, 20V
RdsOn(Max)@IdVgs 4.6mOhm @ 20A, 10V 8.5mOhm @ 12A, 20V
Vgs(th)(Max)@Id 2.4V @ 100µA 2.4V @ 25µA
GateCharge(Qg)(Max)@Vgs 165 nC @ 10 V 52 nC @ 10 V
Vgs(Max) ±20V ±25V
InputCapacitance(Ciss)(Max)@Vds 5250 pF @ 15 V 1680 pF @ 25 V
PowerDissipation(Max) 2.5W (Ta) 2.5W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
MountingType Surface Mount Surface Mount
Comparison Model : IRF9310PBF IRF9388TRPBF

+BOM RFQ