IRFB3077PBF vs IRFB3306PBF

This in-depth comparison of the IRFB3077PBF and IRFB3306PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRFB3077PBF

International Rectifier

Lifecycle: Active
Stock: 4658 PCS
Package: TO-220
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

Part B

IRFB3306PBF

Infineon Technologies

Lifecycle: Active
Stock: 3253 PCS
Package: TO-220-3
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRFB3077PBF	IRFB3306PBF
Series	HEXFET®	HEXFET®
Part Status	Active	Active
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	75 V	60 V
Current - Continuous Drain(Id) @ 25°C	120A (Tc)	120A (Tc)
Drive Voltage(Max Rds On Min Rds On)	10V	10V
Rds On(Max) @ Id Vgs	3.3mOhm @ 75A, 10V	4.2mOhm @ 75A, 10V
Vgs(th)(Max) @ Id	4V @ 250µA	4V @ 150µA
Gate Charge(Qg)(Max) @ Vgs	220 nC @ 10 V	120 nC @ 10 V
Vgs(Max)	±20V	±20V
Input Capacitance(Ciss)(Max) @ Vds	9400 pF @ 50 V	4520 pF @ 50 V
Power Dissipation (Max)	370W (Tc)	230W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole	Through Hole

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