IRFB3077PBF vs IRFB3806PBF Comparison

This in-depth comparison of the IRFB3077PBF and IRFB3806PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
IRFB3077PBF

+BOM

4658 PCS | International Rectifier
IRFB3806PBF

+BOM

5920 PCS | Infineon Technologies
Package TO-220 TO-220-3
Description IRFB3077 - 12V-300V N-CHANNEL PO MOSFET N-CH 60V 43A TO220AB
Series HEXFET® HEXFET®
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V 60 V
Current - Continuous Drain(Id) @ 25°C 120A (Tc) 43A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V 10V
Rds On(Max) @ Id Vgs 3.3mOhm @ 75A, 10V 15.8mOhm @ 25A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA 4V @ 50µA
Gate Charge(Qg)(Max) @ Vgs 220 nC @ 10 V 30 nC @ 10 V
Vgs(Max) ±20V ±20V
Input Capacitance(Ciss)(Max) @ Vds 9400 pF @ 50 V 1150 pF @ 50 V
Power Dissipation (Max) 370W (Tc) 71W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Comparison Model : IRFB3077PBF IRFB3806PBF

+BOM RFQ