IRFB3206PBF vs IRFB3806PBF Comparison

This in-depth comparison of the IRFB3806PBF and IRFB3206PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
IRFB3806PBF

+BOM

5920 PCS | Infineon Technologies
IRFB3206PBF

+BOM

6622 PCS | Infineon Technologies
Package TO-220-3 TO-220-3
Description MOSFET N-CH 60V 43A TO220AB MOSFET N-CH 60V 120A TO220AB
Series HEXFET® HEXFET®
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain(Id) @ 25°C 43A (Tc) 120A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V 10V
Rds On(Max) @ Id Vgs 15.8mOhm @ 25A, 10V 3mOhm @ 75A, 10V
Vgs(th)(Max) @ Id 4V @ 50µA 4V @ 150µA
Gate Charge(Qg)(Max) @ Vgs 30 nC @ 10 V 170 nC @ 10 V
Vgs(Max) ±20V ±20V
Input Capacitance(Ciss)(Max) @ Vds 1150 pF @ 50 V 6540 pF @ 50 V
Power Dissipation (Max) 71W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Comparison Model : IRFB3806PBF IRFB3206PBF

+BOM RFQ