IRFB3806PBF vs IRFB3306PBF

This in-depth comparison of the IRFB3306PBF and IRFB3806PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
IRFB3306PBF

+BOM

3253 PCS | Infineon Technologies
IRFB3806PBF

+BOM

5920 PCS | Infineon Technologies
Package TO-220-3 TO-220-3
Description MOSFET N-CH 60V 120A TO220AB MOSFET N-CH 60V 43A TO220AB
Series HEXFET® HEXFET®
ProductStatus Active Active
FETType N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V 60 V
Current-ContinuousDrain(Id)@25°C 120A (Tc) 43A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V 10V
RdsOn(Max)@IdVgs 4.2mOhm @ 75A, 10V 15.8mOhm @ 25A, 10V
Vgs(th)(Max)@Id 4V @ 150µA 4V @ 50µA
GateCharge(Qg)(Max)@Vgs 120 nC @ 10 V 30 nC @ 10 V
Vgs(Max) ±20V ±20V
InputCapacitance(Ciss)(Max)@Vds 4520 pF @ 50 V 1150 pF @ 50 V
PowerDissipation(Max) 230W (Tc) 71W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
MountingType Through Hole Through Hole
Comparison Model : IRFB3306PBF IRFB3806PBF

+BOM RFQ