IRFB4019PBF vs IRFB4110PBF Comparison
This in-depth comparison of the IRFB4110PBF and IRFB4019PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
Package
TO-220
TO-220-3
Description
MOSFET N-CH 100V 120A TO220AB
IRFB4019 - 12V-300V N-CHANNEL PO
Series
HEXFET®
-
Part Status
Active
Active
FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
150 V
Current - Continuous Drain(Id) @ 25°C
120A (Tc)
17A (Tc)
Drive Voltage(Max Rds On Min Rds On)
10V
10V
Rds On(Max) @ Id Vgs
4.5mOhm @ 75A, 10V
95mOhm @ 10A, 10V
Vgs(th)(Max) @ Id
4V @ 250µA
4.9V @ 50µA
Gate Charge(Qg)(Max) @ Vgs
210 nC @ 10 V
20 nC @ 10 V
Vgs(Max)
±20V
±20V
Input Capacitance(Ciss)(Max) @ Vds
9620 pF @ 50 V
800 pF @ 50 V
Power Dissipation (Max)
370W (Tc)
80W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Through Hole
