IRFB4019PBF vs IRFB4321PBF Comparison

This in-depth comparison of the IRFB4321PBF and IRFB4019PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
IRFB4321PBF

+BOM

2871 PCS | International Rectifier
IRFB4019PBF

+BOM

6417 PCS | International Rectifier
Package TO-220-3 TO-220-3
Description IRFB4321 - 12V-300V N-CHANNEL PO IRFB4019 - 12V-300V N-CHANNEL PO
Series HEXFET® -
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 150 V
Current - Continuous Drain(Id) @ 25°C 85A (Tc) 17A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V 10V
Rds On(Max) @ Id Vgs 15mOhm @ 33A, 10V 95mOhm @ 10A, 10V
Vgs(th)(Max) @ Id 5V @ 250µA 4.9V @ 50µA
Gate Charge(Qg)(Max) @ Vgs 110 nC @ 10 V 20 nC @ 10 V
Vgs(Max) ±30V ±20V
Input Capacitance(Ciss)(Max) @ Vds 4460 pF @ 50 V 800 pF @ 50 V
Power Dissipation (Max) 350W (Tc) 80W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Comparison Model : IRFB4321PBF IRFB4019PBF

+BOM RFQ