IRFB4020PBF vs IRFB4229PBF
This in-depth comparison of the IRFB4229PBF and IRFB4020PBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
Package
TO-220
TO-220
Description
MOSFET N-CH 250V 46A TO220AB
MOSFET N-CH 200V 18A TO220AB
Series
HEXFET®
-
ProductStatus
Active
Active
FETType
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)
250 V
200 V
Current-ContinuousDrain(Id)@25°C
46A (Tc)
18A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)
10V
10V
RdsOn(Max)@IdVgs
46mOhm @ 26A, 10V
100mOhm @ 11A, 10V
Vgs(th)(Max)@Id
5V @ 250µA
4.9V @ 100µA
GateCharge(Qg)(Max)@Vgs
110 nC @ 10 V
29 nC @ 10 V
Vgs(Max)
±30V
±20V
InputCapacitance(Ciss)(Max)@Vds
4560 pF @ 25 V
1200 pF @ 50 V
PowerDissipation(Max)
330W (Tc)
100W (Tc)
OperatingTemperature
-40°C ~ 175°C (TJ)
-55°C ~ 175°C (TJ)
MountingType
Through Hole
Through Hole
